Triode/MOS tube/transistor/module

CSD18509Q5B 40V, N-Channel NexFET™ Power MOSFET, CSD18509Q5B

This family of digital transistors is intended to replace a single device and its external resistor bias network. The bias resistor transistor (BRT) consists of a transistor and a monolithic bias network consisting of two resistors: a series base resistor and a base emitter resistor. The BRT eliminates the need for these separate components by integrating them into a single device. Using BRT can reduce system cost and save board space.

This family of digital transistors is intended to replace a single device and its external resistor bias network. The bias resistor transistor (BRT) consists of a transistor and a monolithic bias network consisting of two resistors: a series base resistor and a base emitter resistor. The BRT eliminates the need for these separate components by integrating them into a single device. Using BRT can reduce system cost and save board space.

This high voltage NPN bipolar transistor is suitable for general purpose amplifier applications. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.

N-channel, 40V, 13A, 10mΩ@10V

P-channel,-30V,-5.2A,100mΩ@-30V

NPN, 50V, 0.1A, SOT23

N-channel MOSFET: RDS(on) (Max 0.018Ω)@VGS=10V

This bipolar power transistor is suitable for line-operated audio output amplifiers, switch-mode power drivers, and other switching applications.

PNP, Vceo=-25V, Ic=-1.5A, hfe=160~300