Triode/MOS tube/transistor/module

Configuration Dual Type N-Ch VDS(V) 100 VGS(V) 20 ID(A)Max. 40 VGS(th)(v) 1.5 RDS(ON)(m?)@4.229V 18 Qg(nC)@4.5V QgS(nC) 2.8 Qgd(nC) 4.1 Ciss(pF) 1010 Coss(pF) 185 Crss(pF) 12

N-channel 40V 3.3mΩ@4.5V

N-channel, Vds=40V, Id=80A

Type: N-Channel Drain-Source Voltage (Vdss): 40V Continuous Drain Current (Id): 200A Power (Pd): 92.6W On-Resistance (RDS(on)@Vgs,Id): 0.86mΩ@10V,50A Threshold Voltage (Vgs(th)@Id): 1.6V@250uA Gate Charge (Qg@Vgs): 115nC@10V Input Capacitance (Ciss@Vds): 7.5nF@20V Operating Temperature: -55℃~+150℃@( Tj) DFN5*6encapsulation;

NPN,Vceo=60V,Ic=0.5A

This N-channel enhancement mode power MOSFET is produced using planar stripe and DMOS proprietary technology. This advanced MOSFET technology is designed for low on-resistance, excellent switching performance and high avalanche energy strength. These devices are suitable for use in switch-mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

N groove VDSS:30V ID:15A