Triode/MOS tube/transistor/module

These N-channel logic level MOSFETs are produced using the advanced PowerTrench process, which is specially suited to minimize on-resistance while maintaining excellent switching performance. These devices are suitable for low-voltage and battery-powered applications requiring in-line low power loss and fast switching.

Type: N-Channel Drain-Source Voltage (Vdss): 60V Continuous Drain Current (Id): 30A Power (Pd): 35W On-Resistance (RDS(on)@Vgs,Id): 26mΩ@10V,20A Threshold Voltage ( Vgs(th)@Id): 1.7V@250uA Gate charge (Qg@Vgs): 19nC@10V Input capacitance (Ciss@Vds): 1.05nF@30V, Vds=60V Id=30A Rds=26mΩ, operating temperature: -55℃~+150℃@(Tj)

N-channel, 100V, 5.4A

Transistor type: NPN Collector-emitter breakdown voltage (Vceo): 32V Collector current (Ic): 1A Power (Pd): 500mW DC current gain (hFE@Ic,Vce): 180@100mA, 3V 180~390 NPN , Vceo=32V, Ic=1A, hfe=180~390, silk screen DAR