Triode/MOS tube/transistor/module

Power MOSFET, 20 V, 890 mA, Single N-Channel, ESD Protected, SOT-723

These N-channel power MOSFETs are produced using the MegaFET process. This process uses a feature size close to that of an LSI integrated circuit, enabling optimal utilization of silicon, resulting in excellent performance. These devices are suitable for applications such as switching regulators, switching converters, motor drivers, and relay drivers. Such transistors can be run directly in integrated circuits. The previous development model was TA09526.

N-channel, 20V, 6.5A, 22mΩ@4.5V (with ESD protection function)

PNP, Vceo=-20V, Ic=-3A, hfe=180~390, silk screen AER

NPN

This NPN bipolar transistor is suitable for linear and switching applications. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.

NPN,40V,5A