Triode/MOS tube/transistor/module
P-channel, -60V, -120A, 0.0067Ω@-10V
説明
This N-channel enhancement mode field effect transistor is produced using Fairchild's proprietary high cell density DMOS technology. This product minimizes on-resistance while providing rugged, reliable, and fast switching performance. It can be used in most applications requiring up to 500mA DC. These products are especially suitable for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers and other switching applications.
説明
NPN, Vceo=45V, Ic=500mA, hfe=250~600
説明
YONGYUTAI (Yongyutai)
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DIODES (US and Taiwan)
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PNP, Vceo=-30V, Ic=-500mA, hfe=144~202
説明
DIODES (US and Taiwan)
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TECH PUBLIC (Taizhou)
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