Triode/MOS tube/transistor/module

MOS, DFN-8 3.3*3.3, N-channel, 40V, 40A, 6.5mΩ (Max), 38W

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NPN, Vceo=50V, Ic=100mA

Configuration Single Type N-Ch VDS(V) 30 VGS(V) 20 ID(A)Max. 38 VGS(th)(v) 1.5 RDS(ON)(m?)@4.358V 22 Qg(nC)@4.5V 7.2 QgS(nC) 1.4 Qgd(nC) 2.6 Ciss(pF) 550 Coss(pF) 68 Crss(pF) 55

This N-channel logic level MOSFET is an efficient solution for low-voltage and battery-powered applications. The device uses an advanced PowerTrench process to minimize on-resistance to optimize power dissipation. Ideal for applications where in-line power loss is critical.

PNP, Vceo=-160V, Ic=-1A, hfe=160~320