Triode/MOS tube/transistor/module
N-channel, 60V, 5.8A, 52mΩ@4.5V
説明
This bipolar power transistor is dedicated to the MC3419 Solid State Subscriber Loop Interface Circuit (SLIC). The MJE270 (NPN) and MJE271 (PNP) are complementary devices.
説明
luxin-semi (Shanghai Luxin)
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VCES(V) 650 IC(A)@144℃ 50 VCE(sat)(V) 1.8 E(off)(mj) 1.1 Vf(V) 2.4
説明
CJ (Jiangsu Changdian/Changjing)
メーカー
PNP, Vceo=-25V, Ic=-500mA, hfe=200~350, silk screen 2T1
説明
MOSFET Type P Drain-Source Voltage (Vdss) (V) -30 Threshold Voltage VGS ±20 Vth(V) 1-2.5 On-Resistance RDS(ON) (mΩ) 54/70 Continuous Drain Current ID (A) 4.1
説明
Cmos (Guangdong Field Effect Semiconductor)
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DIODES (US and Taiwan)
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DIODES (US and Taiwan)
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ST (STMicroelectronics)
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Transistor type: NPN Collector-emitter breakdown voltage (Vceo): 160V Collector current (Ic): 600mA Power (Pd): 300mW Collector cut-off current (Icbo): 0.1uA DC current gain (hFE@Ic,Vce): 100@150mA, 1V Operating temperature: -55℃~+150℃@(Tj)
説明
TECH PUBLIC (Taizhou)
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NCE (Wuxi New Clean Energy)
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